| 38180011.00 |
Monocrystalline sillicon, in the form of discs, wafers or similar form, diameter 7.5cm or more but not exceeding 15.24cm, chemical compounds doped for use in electronics |
kilogram/slice |
11% |
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-- |
| 38180019.10 |
Single crystal silicon slices doped for the electronics industry, with a diameter exceeding 15.24 centimeters but less than 20.32 centimeters |
kilogram/slice |
11% |
|
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Compare-38180011.00 |
| 38180019.20 |
Single crystal silicon slices doped for the electronics industry, with a diameter of 20.32 centimeters or more but less than 30.48 centimeters |
kilogram/slice |
11% |
|
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Compare-38180019.10 |
| 38180019.90 |
Other doped monocrystalline silicon slices used in the electronics industry |
kilogram/slice |
11% |
|
|
Compare-38180019.20 |
| 38180090.20 |
Doped gallium nitride, gallium oxide, gallium phosphide, gallium arsenide, indium gallium arsenide, gallium selenide, gallium antimonide, phosphorous germanium zinc, germanium dioxide, and germanium tetrachloride for electronic industry |
kilogram/- |
17% |
3 |
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Compare-38180019.90 |
| 38180090.90 |
Other chemical elements doped for use in the electronics industry, cut into circular, thin, or similar shapes; Other compounds doped for use in the electronics industry |
kilogram/- |
17% |
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Compare-38180090.20 |
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